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/Ge gate stacks and its impact on electrical propertiesHosoi, Takuji*; Hideshima, Iori*; Minoura, Yuya*; Tanaka, Ryohei*; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*
Shingaku Giho, 113(87), p.19 - 23, 2013/06
An understanding of the mechanisms responsible for formation or decomposition of GeO
interlayer and Ge diffusion into high- layer is important to develop advanced metal/high- gate stacks for Ge MOSFETs. In this work, we fabricated HfO
/GeO/Ge gate stacks by 
oxidation of thin metal Hf layers on Ge substrates. The effect of plasma oxidation on the change in the bonding states of Ge atoms in HfO/GeO/Ge gate stacks and the structural changes induced by metal electrode deposition and thermal annealing was systematically investigated by synchrotron radiation photoemission spectroscopy (SR-PES) and electrical characterization.
Yamamoto, Yoshihisa*; Togashi, Hideaki*; Konno, Atsushi*; Matsumoto, Mitsutaka*; Kato, Atsushi*; Saito, Eiji*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka
Shingaku Giho, 108(80), p.65 - 70, 2008/06
The growth process of thermal oxides on Si(110) surface and the development of their interfacial bonding structures have been investigated by using real-time synchrotron radiation photoemission spectroscopy. As a result, it was clarified that the Si
component in the Si 2p core-level spectra is always much higher than that of Si
for 0-1 mono-layer (ML) oxides on Si(110) surface. Observations on the time-evolution of the O 1s core-level spectrum indicates that the autocatalytic-reaction model proposed for the Si(001) oxidation can be also applicable to the Si(110) oxidation.